Nonvolatile Poly-Si TFT Charge-Trap Flash Memory With Engineered Tunnel Barrier | Semantic Scholar
Charge trap technology advantages for 3D NAND flash drives | TechTarget
Charge trap flash - Wikipedia
Charge trap flash - Wikipedia
a) Schematic of top-view of the dielectric charge-trapping flash... | Download Scientific Diagram
Nonvolatile Poly-Si TFT Charge-Trap Flash Memory With Engineered Tunnel Barrier | Semantic Scholar
Materials | Free Full-Text | Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm
Charge Trapping in Amorphous Dielectrics for Secure Charge Storage | ACS Applied Materials & Interfaces
A triple-level cell charge trap flash memory device with CVD-grown MoS2 - ScienceDirect
Materials | Free Full-Text | Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm
Extraction of Effective Charge Diffusivity in the Charge Trapping Layer of SONOS Flash Memory | SpringerLink
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charge trap flash (V-NAND) (CTF) :: ITWissen.info
Nanomaterials | Free Full-Text | Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Vth Window in 3D NAND Flash Using a Machine-Learning Method
What is floating gate transistor (FGT)? | Definition from TechTarget
Color online) Schematic energy band diagram of fully programed charge... | Download Scientific Diagram
3D Charge Trap NAND Flash Memories | SpringerLink
Charge trap modeling based on mobility–lifetime (μτ) product for NAND flash program operation
3D structures to dominate the flash memory market
Floating-Gate and Charge-Trap NAND flash cell structure (a), 3D NAND... | Download Scientific Diagram
Charge Trapping – The Memory Guy Blog
Micron Announces 176-layer 3D NAND
An Erase Efficiency Boosting Strategy for 3D Charge Trap NAND Flash
7bits/cell flash in Floadia's AI Compute-in-Memory chip is not for SSDs – Blocks and Files
Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer | Nature Communications
Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers - Kim - 2021 - physica status solidi (RRL) – Rapid
